PART |
Description |
Maker |
HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
M5M4V4405CJ M5M4V4405CTP-6 M5M4V4405CTP-6S M5M4V44 |
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (1048576-WORD BY 4-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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M5M44265CJ-7S M5M44265CTP-6S M5M44265CTP-5S |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 江户(超页模式)4194304位(262144字由16位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM 2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM -2M x 8 - Bit Dynamic RAM 2k Refresh 2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
M5M4V4405CTP-7S M5M4V4405CTP-6S |
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM 江户(超页模式)4194304位(1048576 - Word4位)动态随机存储器
|
Mitsubishi Electric, Corp.
|
IBM11N32645BB-60W IBM11N32735BB-60W IBM11N32645CB- |
x72 EDO Page Mode DRAM Module x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
IS41LV16100B-50T-TR IS41LV16100B-60T-TR IS41LV1610 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
MSM51V16165D MSM51V16165DSL MSM51V16165D-70JS MSM5 |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO From old datasheet system DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets]
|
V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL-VITELIC
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
MSM51V16405D MSM51V16405D-50SJ MSM51V16405D-50TS-K |
4,194,304-Word X 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304字4位动态随机存储器:快速页面模式型与江 TVS 400W 40V UNIDIRECT SMA 4194304字4位动态随机存储器:快速页面模式型与江 4194304-Word X 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
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